Blog de la compañía Mingjiada Electronics Supply ST STP240N10F7 High-Performance STripFET F7 Series N-Channel Power MOSFETs

Mingjiada Electronics Supply ST STP240N10F7 High-Performance STripFET F7 Series N-Channel Power MOSFETs

Shenzhen Mingjiada Electronics Co., Ltd. – Long-term supplier of the [ST] STP240N10F7: 100V/110A STripFET™ F7 series N-channel power MOSFET, As a flagship product of the STripFET™ F7 series, the STP240N10F7 offers extremely low on-resistance, excellent switching characteristics and robust reliability, making it an ideal power switching solution for applications such as switching power supplies, motor drives and industrial automation.

I. Product Overview: Performance Breakthroughs of STripFET™ F7 Technology
The STP240N10F7 is an N-channel power MOSFET launched by STMicroelectronics, utilising advanced STripFET™ F7 technology. This technology is based on an enhanced trench gate structure, which significantly reduces the device’s on-resistance (RDS(on)) whilst effectively lowering internal capacitance and gate charge (Qg). This enables extremely low conduction losses whilst maintaining high-speed switching performance, achieving an excellent balance between conduction efficiency and switching efficiency.
The STP240N10F7 utilises the classic TO-220-3 through-hole package, offering superior thermal performance and mechanical reliability, making it an ideal choice for power switching in power conversion, motor drive and industrial control applications.

II. STP240N10F7 Specifications:
Series: STripFET™ F7
Channel Type: N-channel
Drain-Source Breakdown Voltage (VDSS): 100 V
Continuous Drain Current (ID): 110 A @ TC=25°C
On-Resistance (RDS(on)): 2.85 mΩ @ VGS=10V
On-Resistance (RDS(on)max): 3.2 mΩ @ 60A, 10V
Gate threshold voltage (VGS(th)): 2.5 ~ 4.5 V
Total gate charge (Qg): 160 nC @ VDS=50 V
Maximum power dissipation (PD): 300 W
Package: TO-220-3
Operating junction temperature (TJ): -55°C ~ +175°C

III. Detailed Explanation of Core Technical Parameters (STP240N10F7)
The performance specifications of the STP240N10F7 are at the leading level among 100V-rated power MOSFETs. The following is a detailed analysis of the core specifications.
3.1 Voltage and Current Specifications
Drain-Source Voltage (VDS): 100V, suitable for medium-voltage applications such as battery-powered systems, low-voltage DC buses and industrial control.
Continuous drain current (ID): 110 A (Tc = 25°C); peak pulse current up to 440 A, offering robust overcurrent tolerance.
Power dissipation (PD): 300 W (Tc = 25°C); excellent thermal management capabilities enable it to meet the thermal challenges of high-power-density applications.

3.2 On-resistance (RDS(on))
Typical on-resistance: 2.85 mΩ @ VGS=10V
Maximum on-resistance: 3.2 mΩ @ VGS=10V, ID=60A
Extremely low on-resistance is one of the STP240N10F7’s key advantages, meaning lower conduction losses at the same current levels and higher overall system efficiency.

3.3 Gate-related parameters
Gate threshold voltage (VGS(th)): Max. 4.5 V @ ID = 250 μA
Gate charge (Qg): Typical 160 nC / Max. 176 nC @ VGS = 10 V
Input capacitance (Ciss): 12,600 pF @ VDS = 25 V
Maximum Gate-Source Voltage (VGS): ±20V
The low gate charge means that less drive energy is required during switching, effectively reducing drive losses and supporting higher-frequency switching operations.

3.4 Thermal and Environmental Parameters
Operating Junction Temperature (TJ): -55°C to +175°C
Package Thermal Resistance (RθJC): Better than most devices of the same specification
The STP240N10F7 features wide-temperature operation, capable of stable performance within a junction temperature range of -55°C to 175°C, making it suitable for demanding industrial and automotive environments. Its excellent avalanche withstand capability—with 100% of devices undergoing avalanche testing—further ensures reliability under harsh operating conditions such as inductive load switching.

IV. Key Features and Benefits of the STP240N10F7
Extremely low on-state losses: Thanks to the STripFET F7 enhanced-groove gate structure, RDS(on) is as low as 2.85 mΩ, significantly reducing conduction losses and improving system efficiency.
High Switching Efficiency: Optimised internal capacitance (Ciss, Crss) and gate charge (Qg) design support higher-frequency switching operations, reducing switching losses.
High Robustness: The device has undergone 100% avalanche testing, ensuring excellent surge resistance in inductive load applications (such as motors).
User-Friendly Packaging: Utilises a standard TO-220 (TO-220-3) through-hole package, facilitating heat sink installation and making it suitable for high-power-density applications.

V. Mingjiada Electronics: STP240N10F7 Stock Availability Service
Genuine Stock: All STP240N10F7 devices are genuine chips. Mingjiada maintains ample stock year-round, enabling rapid response to urgent orders.
Flexible Procurement Solutions: We support both small-batch sample procurement for R&D and large-volume delivery for mass production, meeting the full range of supply requirements from validation to mass production.
Rapid Delivery Capability: Standard orders are dispatched within 48 hours, whilst urgent orders are shipped within 24 hours, minimising project lead times.

To obtain technical documentation, request samples or receive a quotation for bulk purchases of the STP240N10F7, please contact the Mingjiada Electronics sales team for the latest supply information and technical support.
Company URL: https://www.integrated-ic.com/