Shenzhen Mingjiada Electronics Co., Ltd. (Mingjiada Electronics), as a professional distributor of electronic components in stock, has long supplied genuine Infineon CoolSiC™ series silicon carbide (SiC) MOSFETs. Among these, the IMZC120R007 (full model number: IMZC120R007M2H) is one of the flagship products of Infineon’s second-generation CoolSiC™ technology platform. Mingjiada maintains a constant stock in Shenzhen, supporting rapid delivery for both small-batch samples and large-volume production, providing customers with efficient and reliable power semiconductor solutions.
I. Product Overview
The IMZC120R007 is a 1200V silicon carbide (SiC) power MOSFET launched by Infineon Technologies, belonging to the CoolSiC™ G2 (second-generation) series. Utilizing advanced trench gate technology and leveraging Infineon’s extensive expertise in the SiC field, this device achieves extremely low on-resistance (RDS(on)) and ultra-high switching speeds, while also offering excellent high-temperature stability and reliability.
This model uses a TO-247-4 pin package (four-pin Kelvin source), which, compared to traditional three-pin packages, significantly reduces common-source inductance in the drive circuit, markedly improves switching performance, and reduces switching losses, making it particularly suitable for high-frequency, high-efficiency power conversion applications. Leveraging its global procurement network and Shenzhen distribution center, Mingjiada Electronics ensures the availability of genuine IMZC120R007 devices in stock to meet the needs of various industrial and automotive-grade applications.
II. Key Features and Advantages
Ultra-low on-resistance: Typical value of 7 mΩ (RDS(on)), with a maximum of 9 mΩ (at 25°C), significantly reducing conduction losses and improving system efficiency
High blocking voltage: 1200 V VDS, meeting high-voltage busbar requirements and suitable for 800 V electric vehicles and photovoltaic systems
Low Switching Losses: Thanks to the excellent high-frequency characteristics of SiC material, switching losses are far lower than those of silicon-based IGBTs with equivalent specifications, enabling higher switching frequencies (up to several hundred kHz) and reducing the size of passive components
Wide Operating Temperature Range: Junction temperature up to 175°C, meeting long-term reliability requirements in harsh environments
TO-247-4 Package: The Kelvin source pin eliminates common-source inductance in the drive circuit, enabling faster switching transitions and lower ringing, thereby improving gate drive reliability
Integrated Body Diode: Features low reverse recovery charge (Qrr), enabling lossless reverse conduction without the need for an external freewheeling diode (suitable for synchronous rectification topologies)
High Avalanche Resistance: Offers robust avalanche resistance, enhancing system robustness
Compatible with Standard Gate Drive Voltages: Supports 0 V to 18 V gate drive (recommended turn-on voltage is 15 V), ensuring compatibility with existing drivers
Complies with the AEC-Q101 automotive standard (for automotive-grade models) or meets industrial-grade reliability requirements
III. Detailed Specifications
The following are the key technical specifications for the IMZC120R007 (IMZC120R007M2H):
Product Type: Silicon Carbide MOSFET
Package / Housing: PG-TO247-4-U07
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 1.2 kV
Id – Continuous Drain Current: 201 A
Rds On – Drain-Source On-Resistance: 20 mOhms
Vgs – Gate-Source Voltage: -10 V, +25 V
Vgs th – Gate-Source Threshold Voltage: 5.1 V
Qg – Gate Charge: 176 nC
Minimum Operating Temperature: -55 °C
Maximum Operating Temperature: +175 °C
Pd – Power Dissipation: 711 W
Brand Name: CoolSiC
Configuration: Enhancement
Fall Time: 33.6 ns
Forward Transconductance – Minimum: 60 S
Rise Time: 21.5 ns
Series: CoolSiC G2
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay: 76.3 ns
Typical Turn-On Delay: 32.4 ns
IV. Typical Applications
With its outstanding performance of 1200 V/7 mΩ, the IMZC120R007 is suitable for power conversion systems with extremely high requirements for efficiency, power density, and reliability, specifically including:
Electric Vehicle Charging Stations: PFC and DC-DC stages in DC fast-charging modules, enabling high-efficiency, high-power-density designs
PV Inverters: MPPT and inverter stages in string inverters, improving system efficiency and reducing size
Energy Storage Systems (ESS): Bidirectional DC-DC converters, enabling efficient energy conversion
Industrial power supplies: High-power switching power supplies such as server power supplies, telecommunications power supplies, and electroplating power supplies
On-Board Chargers (OBC) and DC-DC converters (meeting automotive-grade reliability requirements)
Traction inverters (auxiliary or main drive, requiring compliance with AEC-Q101)
Uninterruptible Power Supplies (UPS) and Active Power Filters (APF)
V. Supply and Services
Mingjiada Electronics has been supplying large quantities of Infineon IMZC120R007 silicon carbide MOSFETs for an extended period. Our Shenzhen warehouse maintains a constant stock of these products. We guarantee 100% genuine, original products and provide the following services:
Flexible Procurement: Supports both small-batch sample purchases and large-volume production orders
Fast Delivery: In-stock in Shenzhen; ships within 24 hours of order placement
Global Logistics: Leveraging our warehouse networks in Hong Kong and Shenzhen, we support domestic and international shipping
For the latest inventory, pricing, or to request a quote, please visit the Mingjiada Electronics website (www.hkmjd.com) or contact our sales team.
Contact Information:
Mobile: +86 13410018555
Email: sales@hkmjd.com
Address: Rooms 1239-1241, Guoli Building, Zhenzhong Road, Futian District, Shenzhen, Guangdong Province
Tags: IMZC120R007M2H, IMZC120R007M2, IMZC120R007M, IMZC120R007
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