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Datos del producto:
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| Número de parte: | IPA65R660CFD (en inglés) | Polaridad del transistor:: | N-canal |
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| Vds - Tensión disruptiva drenaje-fuente:: | 650 V | Id - Corriente de drenaje continua:: | 6 A |
| Rds On - Resistencia drenaje-fuente:: | 1.544 ohmios | Vgs - Voltaje de puerta-fuente:: | - 20 V, + 20 V |
| Resaltar: | IPA65R660CFD,IPA65R660CFD Integrated Circuit Chip,N-Channel Power MOSFET Transistors |
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IPA65R660CFD Integrated Circuit Chip 650V CoolMOS™ CFD2 N-Channel Power MOSFET Transistors Product Description Of IPA65R660CFD IPA65R660CFD CoolMOS™ CFD2 is second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Persona de Contacto: Sales Manager
Teléfono: 86-13410018555
Fax: 86-0755-83957753