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Datos del producto:
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| Número de pieza: | Se aplicará el método siguiente: | Tipo FET: | N-canal |
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| Drenaje a voltaje de fuente (Vdss): | 100 voltios | Corriente: drenaje continuo (Id) a 25 °C: | 200A (Tc) |
| Capacidad de entrada (Ciss) (máximo) @ Vds: | 9400 pF a 25 V | Disipación de potencia (Max): | 550W (Tc) |
| Resaltar: | 100V Power MOSFET,200A N-Channel MOSFET,TO-247-3 Trench Gate MOSFET |
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IXTH200N10T Integrated Circuit Chip 100V 200A N-Channel Trench Gate Power MOSFETs TO-247-3 Product Overview Of IXTH200 The IXTH200N10T is a 100V, 200A N-Channel Enhancement Mode Trench Gate Power MOSFET housed in a TO-247-3 package. It belongs to a series of high-current, low-on-resistance trench-gate power MOSFETs designed for demanding power switching applications, including switch-mode power supplies, motor drives, inverters, DC-DC converters, and welding machines.
Persona de Contacto: Sales Manager
Teléfono: 86-13410018555
Fax: 86-0755-83957753