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Datos del producto:
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| Número de pieza: | IPI80N06S4-07 | Drenaje a voltaje de fuente (Vdss): | 60 voltios |
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| Corriente: drenaje continuo (Id) a 25 °C: | 80A (Tc) | Carga de la puerta (Qg) (máximo) @ Vgs: | 56 nC @ 10 V |
| Disipación de potencia (Max): | 79W (Tc) | Temperatura de funcionamiento: | -55 °C ~ 175 °C (TJ) |
| Resaltar: | 60V Automotive N-Channel MOSFET,80A Power MOSFET Transistor,AEC Q101 Qualified N-Channel MOSFET |
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IPI80N06S4-07 Integrated Circuit Chip OptiMOS™-T2 Power Transistors 60V Automotive N-Channel MOSFETs Product Overview Of IPI80N06 The IPI80N06S4-07 is a 60V, enhancement-mode OptiMOS™-T2 automotive N-channel power MOSFET transistor housed in a PG-TO262-3 package. Engineered for demanding automotive and industrial power applications, it delivers high current capability, low on-resistance, and reliable performance across an extended temperature range. Specifications Of IPI80N06
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